• Classen, R. Pöschel, G. Di Filippo, T. Fauster, O. B. Malcioğlu and M. Bockstedte, Electronic Structure of Tetraphenylporphyrin layers on Ag(100), Phys. Rev. B 95, 115414 (2017).
  • D. Thomele, G. R. Bourret, J. Bernardi, M. Bockstedte and O. Diwald, Hydroxylation Induced Alignment of Metal Oxide Nanocubes, Angew. Chem. Int. Ed. 56, 1407 (2017).


  • M. D. Weber, J. E. Wittmann, A. Burger, O. B. Malcioğglu, J. Segarra-Marti, A. Hirsch, P. B. Coto, M. Bockstedte and R. D. Costa, From white to Red: Electric-Field Dependent Chromaticity of Light-Emitting Electrochemical Cells based on Archetypal Porphyrins, Adv. Funct. Mater. 26, 6737 (2016).
  • A. Erpenbeck, R. Härtle, M. Bockstedte and M. Thoss, Vibrationally dependent electron- electron interactions in resonant electron transport through single-junction molecules,
    Phys. Rev. B 93, 115421 (2016).
  • M. Bockstedte, A. Michl, M. Kolband, M. Mehlhorn and K. Morgenstern, Incomplete Bilayer Termination of the Ice (0001) Surface, J. Phys. C 120, 1097 (2016).


  • K. Szasz, V. Ivady, I. I. Abrikosov, E. Janzéen, M. Bockstedte and A. Gali, Spin and photophysics of carbon-antisite vacancy defect in 4H silicon carbide: A potential quan- tum bit, Phys. Rev. B 91, 121201(R) (2015).


  • S. Beljakowa, M. Hauck, M. Bockstedte, F. Fromm, M. Hundhausen, H. Nagasaw, H. B. Weber, G. Pensl and M. Krieger, Persistent conductivity in n-type 3C-SiC observed at low temperatures, Mater. Sci. Forum 778-780, 265 (2014).


  • V. Prucker, O. Rubio-Pons, M. Bockstedte, H. Wang, P. B. Coto and M. Thoss, Dynamical simulation of electron transfer processes in alkanethiolate self-assembled monolayers at the Au(111) surface, J. Phys. C 117, 25334 (2013).


  • O. Pankratov, S. Hensel, P. Götzfried and M. Bockstedte, Graphene on cubic and hexagonal SiC: A comparative theoretical study, Phys. Rev. B 86, 155432 (2012).
  • F. Blobner, P. B. Coto, F. Allegretti, M. Bockstedte, O. Rubio-Pons, H. Wang, D. L. Allara, M. Zharnikov, M. Thoss and P. Feulner, Orbital-symmetry-dependent electron transfer through molecules assembled on metal substrates, J. Phys. Chem. Lett. 3, 436 (2012).


  • A. Decker, S. Suraru, O. Rubio-Pons, E. Mankel, M. Bockstedte, M. Thoss, F. Würthner, T. Mayer and W. Jägermann, Towards Functional Inorganic / Organic Hybrids: Phenoxy- Allyl-PTCDI Synthesis, Experimentally and Theoretically Determined Properties of the Isolated Molecule, Layer Characteristics, and the Interface Formation of Phenoxy- Allyl-PTCDI on Si(111):H Determined by SXPS and DFT, J. Phys. Chem. C 115, 21139 (2011).
  • C. Attaccalite, M. Bockstedte, A. Marini, A. Rubio and L. Wirtz, Coupling of excitons and defect states in boron-nitride nanostructures, Phys. Rev. B 83, 144115 (2011).


  • M. Bockstedte, A. Marini, O. Pankratov and A. Rubio, Many-Body Effects in the Excitation Spectrum of a Defect in SiC, Phys. Rev. Lett. 105, 026401 (2010).
  • O. Pankratov, S. Hensel and M. Bockstedte, Electron spectrum of epitaxial graphene monolayers, Phys. Rev. B 82, 121416(R) (2010)


  • U. Bovensiepen, C. Gahl, J. Stähler, M. Bockstedte, M. Meyer, F. Baletto, S. Scan- dolo, X.-Y. Zhu, A. Rubio and M. Wolf, A Dynamic Landscape from Femtoseconds to Minutes for Excess Electrons at Ice-Metal Interfaces, J. Phys. Chem. C 113, 979 (2009).
  • M. Bockstedte, A. Marini, A. Gali, O. Pankratov and A. Rubio, Defects identified in SiC and their implications, Mater. Sci. Forum 285, 600 (2009)


  • M. Bockstedte, A. Gali, A. Mattausch, O. Pankratov and J. W. Steeds, Identification of intrinsic Defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches, phys. stat. sol. (b) 245, 1281 (2008).


  • G. Pensl, F. Schmid, S. Reshanov, H. Weber, M. Bockstedte, A. Mattausch, O. Pan- kratov, T. Ohshima and H. Itoh, (Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory, Mater. Sci. Forum 556-557, 307 (2007).
  • A. Gali, T. Hornos, M. Bockstedte and T. Frauenheim, Point defect aggregation in Silicon Carbide, Mater. Sci. Forum 556-557, 439 (2007).


  • A. Mattausch, M. Bockstedte, O. Pankratov, J. W. Steeds, S. Furkert, J. M. Hayes, W. Sullivan and N. G. Wright, Thermally stable carbon-related centers in 6H-SiC: Pho- toluminescence spectra and microscopic models, Phys. Rev. B 73, 161201(R) (2006).
  • F. Schmid, S. A. Reshanov, H. B. Weber, G. Pensl, M. Bockstedte, A. Mattausch, O. Pankratov, T. Ohshima and H. Itoh, Deactivation of nitrogen donors in silicon carbide, Phys. Rev. B 74, 245212 (2006).
  • N. T. Son, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, B. Magnusson, A. Ellison, N. Morishita, T. Oshima, H. Itoh and E. Janzén, Divacancy in 4H-SiC, Phys. Rev. Lett. 96, 055501 (2006).
  • T. Umeda, N. T. Son, J. Isoya, E. Janzén, T. Ohshima, N. Morishita, H.  Itoh, A. Gali and M. Bockstedte, Identification of the carbon antisite-vacancy pair in 4H-SiC, Phys. Rev. Lett. 96, 145501 (2006).
  • M. Bockstedte, A. Gali, T. Umeda, N. T. Son, J. Isoya and E. Janzén, Signature of the negative carbon vacancy-antisite complex, Mater. Sci. Forum 527-529, 539 (2006).
  • A. Gali, M. Bockstedte, N. T. Son, T. Umeda, J. Isoya and E. Janzén, Divacancy and its Identification: Theory, Mater. Sci. Forum 527-529, 523 (2006).
  • M. Bockstedte, A. Mattausch and O. Pankratov, Kinetic mechanisms for the deactivation of nitrogen in SiC, Mater. Sci. Forum 527-529, 621 (2006)


  • M. Bockstedte, A. Mattausch and O. Pankratov, Kinetic aspects of the interstitial-mediated boron diffusion in SiC, Mater. Sci. Forum 483-485, 527 (2005).
  • A. Mattausch, M. Bockstedte and O. Pankratov, Ab initio study of dopant interstitials in 4H-SiC, Mater. Sci. Forum 483-485, 523 (2005).


  • M. Bockstedte, A. Mattausch and O. Pankratov, The Solubility and Defect Equilibrium on the n-Type Dopants Nitrogen and Phosphorus in 4H-SiC: A Theoretical Study, Mater. Sci. Forum 457-460, 715 (2004).
  • A. Mattausch, M. Bockstedte and O. Pankratov, Structure and Vibrational Spectra of Carbon Clusters in SiC, Phys. Rev. B 70, 235211 (2004).
  • A. Mattausch, M. Bockstedte and O. Pankratov, A Theoretical Study of Carbon Clusters in SiC: a Sink and a Source of Carbon Interstitials, Mater. Sci. Forum 457-460, 449 (2004).
  • M. Bockstedte, A. Mattausch and O. Pankratov, Different role of carbon and silicon interstitials in the boron diffusion in SiC, Phys. Rev. B 70, 115203 (2004).
  • M. Bockstedte, A. Mattausch and O. Pankratov, Solubility of nitrogen and phosphorus in 4H-SiC: a theoretical study, Appl. Phys. Lett. 85, 58 (2004).
  • M. Bockstedte, A. Mattausch and O. Pankratov, Ab initio study of annealing of vacancies and interstitials in cubic SiC: Vacancy-interstitial recombination and aggregation carbon interstitials, Phys. Rev. B 69, 235202 (2004).
  • A. Mattausch, M. Bockstedte and O. Pankratov, Carbon antisite clusters in SiC: A possible pathway the DII center, Phys. Rev. B 69, 45322 (2004).


  • M. Bockstedte, A. Mattausch and O. Pankratov, Ab initio study of the migration of intrinsic defects in 3C-SiC, Phys. Rev. B 68, 205201 (2003).
  • M. Bockstedte, M. Heid and O. Pankratov, Signature of intrinsic defects in SiC: ab inito calculation of hyperfine tensors, Phys. Rev. B 67, 193102 (2003)
  • M. Bockstedte, M. Heid, A. Mattausch and O. Pankratov, Identification and annealing of common intrinsic defect centers, Mater. Sci. Forum 433-436, 471 (2003).
  • S. Walter, R. Bandorf, W. Weiss, K. Heinz, U. Starke, M. Strass, M. Bockstedte and O. Pankratov, Chemical termination of the CsCl-structure FeSi/Si(111) film surface and its multilayer relaxation, Phys. Rev. B 67, 85413 (2003).
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    Tom Rosenstiel, one of the most respected thinkers on the future of the media, will speak on 23 May at 19:00 in HS 380 of the Faculty of Arts and Sciences / Kultur- und Gesellschaftswissenschaftlichen Fakultät (Rudolfskai 42) about the future of democracy in the age of Fake News, the rise of Russian trolls in the Internet and how journalism will look in the future.
    From Eating to Swaddling: Nature determines the rhythm of many youngsters. So that family-friendliness reaches everyone, here is some information on how and where at the University of Salzburg everyday life with small children is easier.
    At the beginning of the 20th Österreichischen Juristentags, a podium discussion will take place on 23 May, 2018, at 18:00 at the University of Salzburg in the series "Rechtspanorama" on "Do Facebook & Co Endanger Democracy?". The organizers are the daily newspaper, Die Presse, and the University of Salzburg.
    From now until 3 July is the registration period for the ditact_women's IT Summer School of the University of Salzburg, which will take place from 20 August to 1 September, 2018, at the Unipark Nonntal and at the Fachhochschule Salzburg.
    Renaud Dehousse is President of the European University Institute, a position held since 1 September, 2016. Before coming to the EUI, he was Professor and Jean Monnet Chair in EU Law and European Policy Studies at Sciences Po Paris from 2005 to 2016, where he founded and directed the Centre d'études européennes.
    The lecture series, Educational Migration Research in a Comparative Perspective, launches on 17 April, 2018, 17:15 - 18:45, HS Thomas Bernhard (Unipark).
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