2018

  • M. Bockstedte, F. Schutz, Th. Garratt, V. Ivady, A. Gali, Ab initio description of highly correlated states in defects for realizing quantum bits, NPJ Quantum Materials,accepted.
  • V. Prucker, M. Bockstedte, M. Thoss, P. B. Coto, Dynamical simulation of electrontransfer processes in self-assembled monolayers at metal surfaces using a density matrixapproach, J. Chem. Phys., 148, 124705 (2018).

2017

  • Classen, R. Pöschel, G. Di Filippo, T. Fauster, O. B. Malcioğlu and M. Bockstedte, Electronic Structure of Tetraphenylporphyrin layers on Ag(100), Phys. Rev. B 95, 115414 (2017).
  • D. Thomele, G. R. Bourret, J. Bernardi, M. Bockstedte and O. Diwald, Hydroxylation Induced Alignment of Metal Oxide Nanocubes, Angew. Chem. Int. Ed. 56, 1407 (2017).

2016

  • M. D. Weber, J. E. Wittmann, A. Burger, O. B. Malcioğglu, J. Segarra-Marti, A. Hirsch, P. B. Coto, M. Bockstedte and R. D. Costa, From white to Red: Electric-Field Dependent Chromaticity of Light-Emitting Electrochemical Cells based on Archetypal Porphyrins, Adv. Funct. Mater. 26, 6737 (2016).
  • A. Erpenbeck, R. Härtle, M. Bockstedte and M. Thoss, Vibrationally dependent electron- electron interactions in resonant electron transport through single-junction molecules,
    Phys. Rev. B 93, 115421 (2016).
  • M. Bockstedte, A. Michl, M. Kolband, M. Mehlhorn and K. Morgenstern, Incomplete Bilayer Termination of the Ice (0001) Surface, J. Phys. C 120, 1097 (2016).
  • M. Krieger, M. Ruhl, T. Sledziewsky, G. Ellrot, T. Palm, H. B. Weber, M. Bockstedte, Doping of 4H-SiC with group IV elements, Mat. Sci. Forum, 858, 301 (2016).

2015

  • K. Szasz, V. Ivady, I. I. Abrikosov, E. Janzéen, M. Bockstedte and A. Gali, Spin and photophysics of carbon-antisite vacancy defect in 4H silicon carbide: A potential quan- tum bit, Phys. Rev. B 91, 121201(R) (2015).

2014

  • S. Beljakowa, M. Hauck, M. Bockstedte, F. Fromm, M. Hundhausen, H. Nagasaw, H. B. Weber, G. Pensl and M. Krieger, Persistent conductivity in n-type 3C-SiC observed at low temperatures, Mater. Sci. Forum 778-780, 265 (2014).

2013

  • V. Prucker, O. Rubio-Pons, M. Bockstedte, H. Wang, P. B. Coto and M. Thoss, Dynamical simulation of electron transfer processes in alkanethiolate self-assembled monolayers at the Au(111) surface, J. Phys. C 117, 25334 (2013).

2012

  • O. Pankratov, S. Hensel, P. Götzfried and M. Bockstedte, Graphene on cubic and hexagonal SiC: A comparative theoretical study, Phys. Rev. B 86, 155432 (2012).
  • F. Blobner, P. B. Coto, F. Allegretti, M. Bockstedte, O. Rubio-Pons, H. Wang, D. L. Allara, M. Zharnikov, M. Thoss and P. Feulner, Orbital-symmetry-dependent electron transfer through molecules assembled on metal substrates, J. Phys. Chem. Lett. 3, 436 (2012).

2011

  • A. Decker, S. Suraru, O. Rubio-Pons, E. Mankel, M. Bockstedte, M. Thoss, F. Würthner, T. Mayer and W. Jägermann, Towards Functional Inorganic / Organic Hybrids: Phenoxy- Allyl-PTCDI Synthesis, Experimentally and Theoretically Determined Properties of the Isolated Molecule, Layer Characteristics, and the Interface Formation of Phenoxy- Allyl-PTCDI on Si(111):H Determined by SXPS and DFT, J. Phys. Chem. C 115, 21139 (2011).
  • C. Attaccalite, M. Bockstedte, A. Marini, A. Rubio and L. Wirtz, Coupling of excitons and defect states in boron-nitride nanostructures, Phys. Rev. B 83, 144115 (2011).

2010

  • M. Bockstedte, A. Marini, O. Pankratov and A. Rubio, Many-Body Effects in the Excitation Spectrum of a Defect in SiC, Phys. Rev. Lett. 105, 026401 (2010).
  • O. Pankratov, S. Hensel and M. Bockstedte, Electron spectrum of epitaxial graphene monolayers, Phys. Rev. B 82, 121416(R) (2010)

2009

  • U. Bovensiepen, C. Gahl, J. Stähler, M. Bockstedte, M. Meyer, F. Baletto, S. Scan- dolo, X.-Y. Zhu, A. Rubio and M. Wolf, A Dynamic Landscape from Femtoseconds to Minutes for Excess Electrons at Ice-Metal Interfaces, J. Phys. Chem. C 113, 979 (2009).
  • M. Bockstedte, A. Marini, A. Gali, O. Pankratov and A. Rubio, Defects identified in SiC and their implications, Mater. Sci. Forum 285, 600 (2009)

2008

  • M. Bockstedte, A. Gali, A. Mattausch, O. Pankratov and J. W. Steeds, Identification of intrinsic Defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches, phys. stat. sol. (b) 245, 1281 (2008).

2007

  • G. Pensl, F. Schmid, S. Reshanov, H. Weber, M. Bockstedte, A. Mattausch, O. Pan- kratov, T. Ohshima and H. Itoh, (Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory, Mater. Sci. Forum 556-557, 307 (2007).
  • A. Gali, T. Hornos, M. Bockstedte and T. Frauenheim, Point defect aggregation in Silicon Carbide, Mater. Sci. Forum 556-557, 439 (2007).

2006

  • A. Mattausch, M. Bockstedte, O. Pankratov, J. W. Steeds, S. Furkert, J. M. Hayes, W. Sullivan and N. G. Wright, Thermally stable carbon-related centers in 6H-SiC: Pho- toluminescence spectra and microscopic models, Phys. Rev. B 73, 161201(R) (2006).
  • F. Schmid, S. A. Reshanov, H. B. Weber, G. Pensl, M. Bockstedte, A. Mattausch, O. Pankratov, T. Ohshima and H. Itoh, Deactivation of nitrogen donors in silicon carbide, Phys. Rev. B 74, 245212 (2006).
  • N. T. Son, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, B. Magnusson, A. Ellison, N. Morishita, T. Oshima, H. Itoh and E. Janzén, Divacancy in 4H-SiC, Phys. Rev. Lett. 96, 055501 (2006).
  • T. Umeda, N. T. Son, J. Isoya, E. Janzén, T. Ohshima, N. Morishita, H.  Itoh, A. Gali and M. Bockstedte, Identification of the carbon antisite-vacancy pair in 4H-SiC, Phys. Rev. Lett. 96, 145501 (2006).
  • M. Bockstedte, A. Gali, T. Umeda, N. T. Son, J. Isoya and E. Janzén, Signature of the negative carbon vacancy-antisite complex, Mater. Sci. Forum 527-529, 539 (2006).
  • A. Gali, M. Bockstedte, N. T. Son, T. Umeda, J. Isoya and E. Janzén, Divacancy and its Identification: Theory, Mater. Sci. Forum 527-529, 523 (2006).
  • M. Bockstedte, A. Mattausch and O. Pankratov, Kinetic mechanisms for the deactivation of nitrogen in SiC, Mater. Sci. Forum 527-529, 621 (2006)

2005

  • M. Bockstedte, A. Mattausch and O. Pankratov, Kinetic aspects of the interstitial-mediated boron diffusion in SiC, Mater. Sci. Forum 483-485, 527 (2005).
  • A. Mattausch, M. Bockstedte and O. Pankratov, Ab initio study of dopant interstitials in 4H-SiC, Mater. Sci. Forum 483-485, 523 (2005).

2004

  • M. Bockstedte, A. Mattausch and O. Pankratov, The Solubility and Defect Equilibrium on the n-Type Dopants Nitrogen and Phosphorus in 4H-SiC: A Theoretical Study, Mater. Sci. Forum 457-460, 715 (2004).
  • A. Mattausch, M. Bockstedte and O. Pankratov, Structure and Vibrational Spectra of Carbon Clusters in SiC, Phys. Rev. B 70, 235211 (2004).
  • A. Mattausch, M. Bockstedte and O. Pankratov, A Theoretical Study of Carbon Clusters in SiC: a Sink and a Source of Carbon Interstitials, Mater. Sci. Forum 457-460, 449 (2004).
  • M. Bockstedte, A. Mattausch and O. Pankratov, Different role of carbon and silicon interstitials in the boron diffusion in SiC, Phys. Rev. B 70, 115203 (2004).
  • M. Bockstedte, A. Mattausch and O. Pankratov, Solubility of nitrogen and phosphorus in 4H-SiC: a theoretical study, Appl. Phys. Lett. 85, 58 (2004).
  • M. Bockstedte, A. Mattausch and O. Pankratov, Ab initio study of annealing of vacancies and interstitials in cubic SiC: Vacancy-interstitial recombination and aggregation carbon interstitials, Phys. Rev. B 69, 235202 (2004).
  • A. Mattausch, M. Bockstedte and O. Pankratov, Carbon antisite clusters in SiC: A possible pathway the DII center, Phys. Rev. B 69, 45322 (2004).

2003

  • M. Bockstedte, A. Mattausch and O. Pankratov, Ab initio study of the migration of intrinsic defects in 3C-SiC, Phys. Rev. B 68, 205201 (2003).
  • M. Bockstedte, M. Heid and O. Pankratov, Signature of intrinsic defects in SiC: ab inito calculation of hyperfine tensors, Phys. Rev. B 67, 193102 (2003)
  • M. Bockstedte, M. Heid, A. Mattausch and O. Pankratov, Identification and annealing of common intrinsic defect centers, Mater. Sci. Forum 433-436, 471 (2003).
  • S. Walter, R. Bandorf, W. Weiss, K. Heinz, U. Starke, M. Strass, M. Bockstedte and O. Pankratov, Chemical termination of the CsCl-structure FeSi/Si(111) film surface and its multilayer relaxation, Phys. Rev. B 67, 85413 (2003).
  • News
    A team led by the Salzburg-based young researcher, Therese Wohlschlager, has developed an approach that allows biopharmaceuticals to be characterized more easily and faster than before, and subsequently, can be produced more cheaply.
    Information Event "Unifinanzierung NEU (Fokus Lehre) und Zielvereinbarungsprozess" will be held Tuesday, 16 October, 2018, from 15:00 to 17:00, Thomas Bernhard Hörsaal in the Unipark.
    Orientation Week takes place from 17 - 21 September, 2018.
    Play with - International Stallcatchers Catchathon 2018!
    On Friday, 7 September, 2018, in Berlin, the project "Making Art, Making Media, Making Change!", by Elke Zobl (Associate Professor of Science & Art), received the European Youth Culture Award (EYCA) in the category of "Science and Research”.
    Exhibition opening and conversation with Jian Haake (Kiel). Date: Thursday, 4 October at 18:30. Location: Room for Art at KunstQuartier, Bergstraße 12a. Exhibition Duration: From 5 October until 9 November, 2018. www.w-k.sbg.ac.at/de/kunstpolemik-polemikkunst/aktuelles
    The University Library Salzburg (Main Library and Faculty Library for Law) opens the door to the public and offers a diverse program.
    Political education has been a general teaching principle in Austria since 1978, that is, an educational and developmental task, which is the responsibility of the teachers of all school subjects and grades. The lecture series will show ways in which democracy education can work in different subjects, so that student teachers and educators have different perspectives on the same fundamental challenge.
    On the occasion of the Long Night of the Museums 2018, the Casting Collection of the University of Salzburg will be open to the public.
    Putting Successful Models Into Perspective in Europe, 26 – 28 September, 2018, Schloss Rif, University of Salzburg. For students there are discounted day tickets!
    New Watercolors • Eva Pötzelsberger
    Important dates and information about registering for courses at the Language Center in the Winter Semester 2018/19.
    Brothers Leopold (6 years) and Ferdinand (4 years) explained to their friends: "We go to UNI during the holidays" and were right. They had places in the fully booked summer care program of the University’s Kinderbüro.
    The Leopold Kohr Academy has organized two events, one in September and another in October, 2018. Together with the University of Salzburg, the institution runs the Kohr Archive.
    On Saturday, 22 September, 2018, at 11:00, the Botanical Garden will be displaying the images of the artist, Karin Wimmeder. Only in fair weather. Alternative date: Saturday, 29 September, 2018, 11:00. Musically accompanied by the rhythm group "Schlagartig.org".
    From Hortus Medicus to Pharma Research. An exhibition of the Association of Botanical Gardens 2018.
    On 6 December, 2018, the University of Salzburg will host the WTZ Training Days on the theme of communication, dissemination and distribution in H2020 projects.
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    20.09.18 „Reisenotizen und Landschaftsfantasien“ neue Aquarelle • Eva Pötzelsberger
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    25.09.18 Welcome Day/Orientierungstag für Erstsemestrige
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